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US 6,472,318 B2Granted
Method of fabricating semiconductor device having trench interconnection
AssigneeNEC Corporation
InventorKazuyoshi Ueno
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a trench interconnection is formed by providing a semiconductor substrate with an insulating film formed thereon. A trench is formed in the insulating film, and an amorphous phase barrier film of WSixNy or WCxNy in an amorphous phase is formed.
Claims14
A method of fabricating a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming an insulating film on said semiconductor substrate;
- forming a trench in said insulating film;
- and
- forming and depositing on an inner surface of said trench an amorphous phase barrier film made of a material selected from the group consisting of WSixNy and WCxNy by reacting a raw material gas containing W, a gas selected from the group consisting of silane gas, dichlorosilane gas and a hydrocarbon gas, and a nitrogen supply source.
2 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- providing a semiconductor substrate;
- forming an insulating film on said semiconductor substrate;
- forming a trench in said insulating film;
- causing a reaction between a raw material gas selected from the group consisting of W(N(CH3)2)6 and W(N(C2H5)2)6 and a gas selected from the group consisting of SiH4 and CH4 to form and deposit on an inner surface of said trench an amorphous phase barrier film made of a material selected from the group of WSixNy and WCxNy on a semiconductor substrate.
1 more element
A method of fabricating a semiconductor device comprising the steps of:
- providing a semiconductor substrate having an insulating film formed thereon;
- forming a trench in said insulating film;
- and
- reacting a raw material gas containing W, a gas selected from the group consisting of silane gas, dichlorosilane gas and a hydrocarbon gas, and a nitrogen supply source to form and deposit, on an inner surface of said trench an amorphous barrier film made of a material selected the group consisting of WSixNy and WCxNy.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- providing a semiconductor substrate having an insulating film formed thereon;
- forming a trench in said insulating film;
- and
- reacting a raw material gas selected from the group consisting of W(N(CH3)2)6 and W(N(C2H5)2)6 and a gas selected from the group consisting of SiH4 and CH4 to form a on an inner surface of said trench an amorphous phase barrier film made of material selected from the group of WSixNy and WCxNy on a semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.