US 6,472,312 B2Granted

Methods for inhibiting microelectronic damascene processing induced low dielectric constant dielectric layer physical degradation

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsTien-I Bao, Syun-Ming Jang, Weng Chang

Life of this patent

Estimating the term…

Loading patent…

Abstract

Within a series of chemical mechanical polish (CMP) planarizing methods for forming a series of damascene structures within a series of microelectronic fabrications, there is employed at least one lateral offset width between: (1) a sidewall of a patterned dielectric layer and an edge of a substrate; (2) a sidewall of a patterned conductor layer and a sidewall of a patterned dielectric layer; and (3) a sidewall of a patterned second dielectric layer and a sidewall of a first dielectric layer. By employing the at least one lateral offset, there is provided the series of damascene structures with inhibited physical degradation of a patterned dielectric layer when forming within an aperture defined by the patterned dielectric layer a chemical mechanical polish (CMP) planarized patterned conductor layer.

Claims6

Dependent claims

A method for forming a damascene structure comprising:

providing a substrate;
forming over the substrate a patterned dielectric layer which defines an aperture, where a sidewall of the patterned dielectric layer adjacent an edge of the substrate is laterally offset from the edge of the substrate by a lateral offset width;
forming over the patterned dielectric layer a blanket conductor layer which fills the aperture and covers the sidewall of the patterned dielectric layer laterally offset from the edge of the substrate;
chemical mechanical polish (CMP) planarizing the blanket conductor layer to form a chemical mechanical polish (CMP) planarized patterned conductor layer within the aperture and a chemical mechanical polish (CMP) planarized patterned conductor residue layer interposed between the sidewall of the patterned dielectric layer and the edge of the substrate.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 09/761,485Filed 16 Jan 2001
Published: US 2002/0094674 A118 Jul 2002
Granted: 29 Oct 2002
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 20/062
Of conductive parts of the interconnections: by smoothing of conductive parts, e.g. by planarisation
H10W 20/074
Of dielectric parts thereof: of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or…
H10W 20/084
By forming openings in the dielectric parts: for dual-damascene structures
H10W 20/47
Characterised by their insulating parts: comprising two or more dielectric layers having different properties, e.g. different dielectric constants