Method for growing p-n homojunction-based structures utilizing HVPE techniques

A method of fabricating a p-n homojunction device without the inclusion of a low temperature buffer layer, the method utilizing HVPE techniques and comprising the steps of:

• locating a first Group III metal in a first source zone of a reaction chamber;
• locating a second Group III metal in a second source zone of said reaction chamber;
• locating at least one acceptor impurity metal in a third source zone of said reaction chamber;
• locating a p-type substrate within a growth zone of said reaction chamber;
• heating said p-type substrate to a first temperature, wherein said first temperature is greater than 900° C.;
• heating said first Group III metal to a second temperature;
• heating said second Group III metal to a third temperature;
• heating said at least one acceptor impurity metal to a fourth temperature;
• introducing a halide reaction gas into said first source zone to form a first halide metal compound;
• introducing said halide reaction gas into said second source zone to form a second halide metal compound;
• transporting said first and second halide metal compounds to said growth zone;
• transporting said at least one acceptor impurity metal to said growth zone;
• introducing a reaction gas into said growth zone, said reaction gas containing at least one Group V element;
• growing a first III-V layer on said substrate, said first III-V layer formed by said reaction gas reacting with said first and second halide metal compounds, wherein said first III-V layer contains said at least one acceptor impurity metal, and wherein said first III-V layer is a p-type III-V layer;
• discontinuing said step of transporting said second halide metal compound to said growth zone;
• growing a second III-V layer on said first III-V layer, said second III-V layer formed by said reaction gas reacting with said first halide metal compound, wherein said second III-V layer contains said at least one acceptor impurity metal, wherein said second III-V layer is a p-type III-V layer;
• discontinuing said step of transporting said at least one acceptor impurity metal to said growth zone;
• growing a third III-V layer on said second III-V layer, said third III-V layer formed by said reaction gas reacting with said first halide metal compound, wherein said third III-V layer is an n-type III-V layer;
• resuming said step of transporting said second halide metal compound to said growth zone;
• and
• growing a fourth III-V layer on said third III-V layer, said fourth III-V layer formed by said reaction gas reacting with said first and second halide metal compounds, wherein said fourth III-V layer is an n-type III-V layer.