Method of producing TFT array substrate for liquid crystal display device

A method for producing a TFT array substrate for a liquid crystal display device in which a gate insulator layer is formed on a silicon semiconductor layer, comprising:

• generating, in a particle generating portion, particles containing atoms that constitute the gate insulator layer by, using high frequency energy, decomposing a gaseous compound containing said atoms,
• generating excited particles by introducing the particles into a plasma atmosphere region and applying energy thereto, the plasma atmosphere region produced by exciting argon gas, and
• providing a thin film forming apparatus, the thin film forming apparatus comprising a substrate holding portion disposed outside the plasma atmosphere region and opposite to the plasma atmosphere region so that the particle generating portion is between the plasma atmosphere region and the substrate holding portion, and a voltage applying means for applying an electric field between the plasma atmosphere region and the substrate holding portion so that, using the electric field, silicon particles excited and ionized in the plasma atmosphere region are extracted and applied onto a surface of the substrate,
• locating a substrate on the substrate-holding portion, and guiding the excited particles onto the substrate to deposit the excited particles thereon, to form a gate insulator layer on the silicon semiconductor layer.

A method for producing a TFT array substrate for a liquid crystal display device in which a gate insulator layer is formed on a silicon semiconductor layer, comprising:

• forming a polysilicon layer on a substrate by applying thermal energy to a vapor source comprising solid silicon to vaporize the silicon to prepare silicon particles, exciting and ionizing the silicon particles in a plasma atmosphere region, and depositing the silicon particles onto the substrate;
• and
• forming a gate insulator layer by exciting argon gas to produce a high density plasma and applying thermal energy resulting therefrom to vaporize a solid vapor source comprising a substance that constitutes the gate insulator layer to produce particles,
• exciting and ionizing the particles in the plasma atmosphere region, and
• depositing the particles on the substrate to form a layer.

A method for producing a TFT array substrate for a liquid crystal display device, comprising providing on a single transparent substrate at least one transparent pixel electrode, a pixel-switching TFT for switching the transparent pixel electrode and a driving element for driving the pixel-switching TFT;

• wherein
• the driving element is a poly-Si TFT comprising a polysilicon layer having an electric field-effect mobility of 100 cm2/V-s or more;
• and
• the polysilicon layers in the pixel-switching TFT and the driving element are formed using a thin film forming apparatus, the apparatus comprising a portion for generating vaporized particles by applying thermal energy to a solid vapor source, a plasma atmosphere region for exciting the vaporized particles generated in the vaporized particle generating portion by applying energy to the vaporized particles to prepare excited particles, a substrate holding portion disposed outside the plasma atmosphere region and opposite the plasma atmosphere region so that the vaporized particle-generating portion is between the plasma atmosphere region and the substrate-holding portion, and a voltage applying means for applying an electric field between the plasma atmosphere region and the substrate-holding portion so that, using the electric field, particles excited and ionized in the plasma atmosphere region are extracted and applied onto a surface of the substrate.

A method for producing a TFT array substrate for a liquid crystal display device, comprising providing a transparent substrate having thereon at least a transparent pixel electrode, a pixel-switching TFT for switching the transparent pixel electrode, and a driving element for driving the pixel-switching TFT, wherein:

• the pixel-switching TFT is a poly-Si TFT comprising a polysilicon layer having an electric field-effect mobility of 1C25 cm2/V-s;
• the driving element is a MOS transistor comprising a polysilicon layer having an electric field-effect mobility of 100 cm2/V-s or more and is mounted on the transparent substrate;
• and the polysilicon layer of the pixel-switching TFT is formed using a thin film forming apparatus, the apparatus comprising a vaporized particle generating portion for generating vaporized particles by applying thermal energy to a solid vapor source, a plasma atmosphere region for exciting the vaporized particles generated in the vaporized particle generating portion by applying energy to the vaporized particles to prepare excited particles, a substrate holding portion disposed outside the plasma atmosphere region and opposite the plasma atmosphere region so that the vaporized particle-generating portion is between the plasma atmosphere region and the substrate-holding portion, and a voltage applying means for applying an electric field between the plasma atmosphere region and the substrate-holding portion so that, using the electric field, silicon particles excited and ionized in the plasma atmosphere region are extracted and applied onto a surface of the substrate.

A method for producing a TFT array substrate for an in-plane type liquid crystal display element, comprising, providing on a single substrate, at least a first comb-shaped pixel electrode, a pixel-switching TFT for switching the first comb-shaped pixel electrode, a driving element for driving the pixel-switching TFT, and a second comb-shaped pixel electrode disposed opposite the first comb-shaped pixel electrode, wherein

• the pixel-switching TFT is a poly-Si TFT comprising a polysilicon layer having an electric field-effect mobility of 1C25 cm2/V-s;
• the driving element is a poly-Si TFT comprising a polysilicon layer having an electric field-effect mobility of 100 cm2/V-s or more;
• and
• the polysilicon layers in the pixel-switching TFT and the driving element are formed by using a thin film forming apparatus, the apparatus comprising a vaporized particle generating portion for generating vaporized particles by applying thermal energy to a solid vapor source, a plasma atmosphere region for exciting the vaporized particles generated in the vaporized particle generating portion by applying energy to the vaporized particles to prepare excited particles, a substrate holding portion disposed outside the plasma atmosphere region and opposite to the plasma atmosphere region so that the vaporized particle-generating portion is between the plasma atmosphere region and the substrate-holding portion, and a voltage applying means for applying an electric field between the plasma atmosphere region and the substrate-holding portion so that, using the electric field, silicon particles excited and ionized in the plasma atmosphere region are extracted and applied onto a surface of the substrate.

A method for producing a TFT array substrate for an in-plane type liquid crystal display element, comprising providing on a single substrate, at least a first comb-shaped pixel electrode, a pixel-switching TFT for switching the first comb-shaped pixel electrode, a driving element for driving the pixel-switching TFT, and a second comb-shaped pixel electrode disposed opposite the first comb-shaped pixel electrode, wherein

• the pixel-switching TFT is a poly-Si TFT comprising a polysilicon layer having an electric field-effect mobility of 1C25 cm2/V-s;
• the driving element is a MOS transistor comprising a polysilicon layer having an electric field-effect mobility of 100 cm2/V-s or more and is mounted on the transparent substrate;
• and
• the pixel-switching TFT is formed using a thin film forming apparatus, the apparatus comprising a vaporized particle generating portion for generating vaporized particles by applying thermal energy to a solid vapor source, a plasma atmosphere region for exciting the vaporized particles generated in the vaporized particle generating portion by applying energy to the vaporized particles to prepare excited particles, a substrate holding portion disposed outside the plasma atmosphere region and opposite the plasma atmosphere region so that the vaporized particle-generating portion is between the plasma atmosphere region and the substrate-holding portion, and a voltage applying means for applying an electric field between the plasma atmosphere region and the substrate-holding portion so that, using the electric field, silicon particles excited and ionized in the plasma atmosphere region are extracted and applied onto a surface of the substrate.