Self-amorphized regions for transistors
AssigneeAdvanced Micro Devices, Inc.
InventorBin Yu
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an integrated circuit may include the steps of forming a deep amorphous region and doping the deep amorphous region. The doping of the deep amorphous region can form source and drain regions with extensions. After doping, the substrate is annealed. The annealing can occur at a low temperature. The deep amorphous region can be formed with a self-amorphizing implant.
Claims20
A method of manufacturing a transistor, the method comprising:
- providing a gate structure;
- providing a self-amorphized halo dopant implant;
- providing a shallow extension dopant implant;
- forming a pair of spacers abutting the gate structure;
- providing a self-amorphized deep source/drain dopant implant;
- and
- annealing at a low temperature, the annealing activating dopants from the shallow extension dopant implant, the halo dopant implant, and the deep source/drain dopant implant via solid phase epitaxy.
A process of forming a transistor on a substrate, the substrate including a gate conductor, the process comprising:
- doping a halo region and simultaneously forming a deep amorphous region;
- doping a shallow portion of the deep amorphous region for shallow source and drain extensions;
- doping deep source and drain regions in a self-amorphizing process;
- and
- recrystallizing the deep amorphous region in a low temperature process.
A method of manufacturing a transistor on an ultralarge scale integrated circuit, the method comprising the steps of:
- providing a gate structure having a high-k gate dielectric;
- amorphizing a halo region in a substrate with a medium dose halo dopant implant including one of Sb or As;
- implanting an amorphizing dopant at a heavy dose into a shallow portion of the halo region of the substrate to form source and drain extensions;
- implanting with a self amorphizing implant a dopant into a deep portion of the substrate to form deep source and drain regions, the dopant for the deep source and drain regions including Sb if As is used in the amorphizing step and including As if Sb is used in the amorphizing step;
- and
- recrystallizing the halo region in a low temperature process between 500-600°C.
Dependencies are inferred from the claim text.