Method of manufacturing a channel stop implant in a semiconductor device
AssigneeAgere Systems Inc.
InventorsRobert J. Griffin, Charles W. Pearce
Life of this patent
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Abstract
The present invention provides a method of manufacturing a semiconductor device, and a related method manufacturing an integrated circuit. In one embodiment, the method of manufacturing a semiconductor device includes creating a source/drain region between an electrode and an isolation structure located on a substrate. The method further includes implanting a dopant at a predetermined implant dopant concentration through an opening formed in a channel stop mask and located between the electrode and the isolation structure to form a channel stop between the source/drain region and the isolation structure.
Claims18
A method of manufacturing a semiconductor device, comprising:
- creating a source/drain region between an electrode and an isolation structure located on a substrate;
- and
- implanting a dopant at a predetermined implant dopant concentration through an opening formed in a channel stop mask and located between said electrode and said isolation structure to form a channel stop between said source/drain region and said isolation structure.
A method of manufacturing an integrated circuit, comprising:
- creating a source/drain region between each of a plurality of gates and isolation structures located on a semiconductor wafer;
- implanting a dopant through openings formed in a channel stop mask and located between said each of said plurality of gates and said isolation structures to form a channel stop between said each of said source/drain regions and said isolation structures;
- and
- interconnecting each of said gates and source/drain regions to form an operative integrated circuit.
Dependencies are inferred from the claim text.