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US 6,472,276 B1Granted
Using silicate layers for composite semiconductor
AssigneeMotorola, Inc.
InventorsLyndee L. Hilt, Ravindranath Droopad
Life of this patent
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Abstract
A composite semiconductor including silicon and compound semiconductor, and having a silicate layer for promoting layer-by-layer monocrystalline growth. Silicon may be introduced to react with the monocrystalline oxide layer to form the silicate layer. During the fabrication process, the thickness of the amorphous oxide layer may be increased by suitable methods, such as annealing or oxygen diffusion.
Claims22
A process for fabricating a semiconductor structure comprising:
- providing a monocrystalline silicon substrate;
- depositing a monocrystalline oxide layer overlying the monocrystalline silicon substrate;
- forming an amorphous oxide layer between the monocrystalline oxide layer and the monocrystalline silicon substrate;
- forming a silicate layer overlying the monocrystalline oxide layer;
- and
- epitaxially forming a monocrystalline compound semiconductor layer overlying the silicate layer.
3 more elements
A process for fabricating a semiconductor structure comprising:
- providing a monocrystalline silicon substrate;
- depositing a monocrystalline oxide layer overlying the monocrystalline silicon substrate;
- forming an amorphous oxide layer between the monocrystalline oxide layer and the monocrystalline silicon substrate;
- diffusing oxygen through the monocrystalline oxide layer to increase the thickness of the amorphous oxide layer;
- forming a silicate layer overlying the monocrystalline oxide layer;
- and
- epitaxially forming a monocrystalline compound semiconductor layer overlying the silicate layer.
4 more elements
A process for fabricating a semiconductor structure comprising:
- providing a monocrystalline silicon substrate;
- depositing a monocrystalline oxide layer overlying the monocrystalline silicon substrate;
- forming an amorphous oxide layer between the monocrystalline oxide layer and the monocrystalline silicon substrate;
- amorphizing at least a portion of the monocrystalline oxide layer to increase the thickness of the amorphous oxide layer by annealing the monocrystalline oxide layer;
- forming a silicate layer overlying the monocrystalline oxide layer;
- and
- epitaxially forming a monocrystalline compound semiconductor layer overlying the silicate layer.
4 more elements
Dependencies are inferred from the claim text.