High quality factor, integrated inductor and production method thereof

A method for manufacturing a semiconductor device having an integrated inductor, the method comprising:

• forming a dielectric layer on a semiconductor material body;
• forming a sacrificial region and an electrical connection line on said dielectric layer, said electrical connection line extending from a central portion of said sacrificial region toward a peripheral portion thereof,
• forming a support region of dielectric material on said sacrificial region and said electrical connection line;
• forming an electrically conductive coil on said support region and coupled at a central portion thereof to said electrical connection line;
• forming apertures peripherally and separated from each other on said support region and extending as far as said sacrificial region;
• and
• removing said sacrificial region through said apertures to form an air gap under the support region.

A method for producing an integrated circuit, the method comprising:

• forming on a surface of a semiconductor material body a first metal layer and defining therein a sacrificial region having a slot extending from a central portion of the sacrificial region toward a peripheral portion thereof and a connection line formed within the slot;
• depositing an first dielectric layer over the sacrificial region, the slot and the connection line, the first dielectric layer being shaped to form a central aperture at the central portion of the sacrificial region adjacent to an end of the connection line and peripheral apertures at peripheral portions of the sacrificial region;
• depositing a second metal layer over the first dielectric layer and in contact with the first metal layer at the central aperture, the second metal layer shaped to form an inductor extending from the central aperture toward a lateral support portion between the peripheral apertures;
• and
• removing the sacrificial region through the peripheral apertures.