Method of manufacturing a thin-film transistor with a short-circuiting pattern
AssigneeFujitsu Limited
InventorsHong Yong Zhang, Yoshio Nagahiro
Life of this patent
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Abstract
When a thin-film transistor (TFT) is formed on a glass substrate, electric charges caused in the TFT can be removed so as to avoid electrostatic damage in the TFT. A short-circuiting pattern that short-circuits the source region and the drain region of the TFT is added to a polysilicon pattern that constitutes the TFT. This short-circuiting pattern is removed at the same time as or after the wiring formation in the source region and the drain region.
Claims14
A method of producing a thin-film transistor on an insulating substrate, comprising the steps of:
- forming a polysilicon pattern on the insulating substrate, the polysilicon pattern including a first region of a first conductivity, a second region of the first conductivity, a first bridging region that connects the first region and the second region, and a second bridging region that also connects the first region and the second region;
- forming an insulating film on the insulating substrate in such a manner that the insulating film covers the polysilicon pattern;
- forming a gate electrode pattern on the insulating film in such a manner that the gate electrode pattern covers the first bridging region;
- forming a wiring pattern on the first region in such a manner that the wiring pattern is in contact with the first region;
- and
- cutting the second bridging region after the step of forming the wiring pattern.
A method of producing a liquid-crystal display device including a thin-film transistor formed on a glass substrate, said method comprising the steps of:
- forming a polysilicon pattern on the glass substrate, the polysilicon pattern including a first region of a first conductivity, a second region of the first conductivity, a first bridging region that connects the first region and the second region, and a second bridging region that also connects the first region and the second region;
- forming an insulating film on the glass substrate in such a manner that the insulating film covers the polysilicon pattern;
- forming a gate electrode pattern on the insulating film in such a manner that the gate electrode pattern covers the first bridging region;
- forming a wiring pattern on the first region in such a manner that the wiring pattern is in contact with the first region;
- and
- cutting the second bridging region after the step of forming the wiring pattern.
Dependencies are inferred from the claim text.