Dielectric layer with treated top surface forming an etch stop layer and method of making the same
AssigneeAdvanced Micro Devices, Inc.
InventorsCalvin T. Gabriel, Lynne A. Okada
Life of this patent
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Abstract
A metal interconnect arrangement provides a dielectric layer that has its upper surface treated to provide an etch stop etch stop layer. The upper surface is subjected to a plasma etch that treats, such as by carbonization, the dielectric material in a manner that alters the etch characteristics of the dielectric material. After a second dielectric layer is formed over the treated surface of the first dielectric layer, an etching may be performed through the second dielectric layer that stops on the treated surface of the first dielectric layer in a damascene interconnect process.
Claims17
A method of forming an interconnect arrangement, comprising the steps of:
- forming a first dielectric layer having an upper surface;
- treating the upper surface of the first dielectric layer to form etch stop material after the first dielectric layer is formed;
- depositing a second dielectric layer on the treated upper surface of the first dielectric layer;
- and
- etching a feature into the second dielectric layer and stopping on the etch stop material.
A method of forming an interconnect arrangement, comprising the steps of:
- forming a first dielectric layer having an upper surface;
- treating the upper surface of the first dielectric layer to form etch stop material;
- depositing a second dielectric layer on the treated upper surface of the first dielectric layer, including carbonizing the upper surface of the first dielectric layer by subjecting the first dielectric layer to a plasma employing one of a hydrocarbon gas as a reactant gas;
- and etching a feature into the second dielectric layer and stopping on the etch stop material;
- wherein the step of subjecting the first dielectric layer to a plasma includes forming a plasma in a plasma etcher with pressure between about 5 to about 500 mToor, RF power between 50 to about 2000 W, flow of reactant gas between about 2 to about 50 sccm, Ar flow between about 50 to about 2000 sccm temperature between −20 C to about 100 C, for between about 20 to 300 seconds.
A method of forming an interconnect arrangement, comprising the steps of:
- forming a first dielectric layer having an upper surface;
- treating the upper surface of the dielectric layer to form etch stop material, including nitride in the upper surface of the first dielectric layer by subjecting the first dielectric layer to a plasma employing nitrogen gas as a reactant gas;
- depositing a second dielectric layer on the treated upper surface of the first dielectric layer;
- and
- etching a feature into the second dielectric layer and stopping on the etch stop material.
A method of forming an interconnect arrangement, comprising the steps of:
- forming a first dielectric layer having an upper surface;
- carbonizing the upper surface of the dielectric layer to form etch stop material by subjecting the first dielectric layer to a plasma formed in a plasma etcher with pressure between about 30 to about 50 mTorr, RF power between about 300 to about 500 W, flow of reactant gas between about 4 to about 10 sccm, Ar flow between about 250 to about 750 sccm, temperature between about 10 C to about 40 C, for between about 30 to about 90 seconds;
- depositing a second dielectric layer on the carbonized upper surface of the first dielectric layer;
- etching a feature through the second dielectric layer, the etch stop material and the first dielectric layer, said etching subjecting the second dielectric layer, the first dielectric layer and the etch stop material to a plasma formed in a plasma etcher with a pressure between about 25 to about 75 mTorr, RF power between about 1250 to about 1750 W, flow of C4F8 between about 12 to about 24 sccm, flow of CO between about 200 to about 400 sccm, flow of O2 between about 0 to about 5 sccm, Ar flow between about 200 to about 600 sccm, temperature between about 20 C to about 60 C, for between about 90 to about 150 seconds, and
- etching a feature into the second dielectric layer and stopping on the etch stop material by subjecting the second dielectric layer to a plasma formed in a plasma etcher with a pressure between about 25 to about 75 mTorr, RF power between about 750 to about 1250 W, flow of C4F8 between about 15 to about 25 sccm, flow of CO between about 200 to about 400 sccm, Ar flow between about 300 to about 500 sccm, temperature between about 15 C to about 40 C, for between about 120 to about 240 seconds.
Dependencies are inferred from the claim text.