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US 6,472,127 B1Granted
Method of forming a photoresist pattern
AssigneeNEC Corporation
InventorMasaharu Takizawa
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Abstract
In order to decrease a development defects even when the blocking level of a chemically amplified photoresist is increased, according to a disclosed photoresist pattern forming method, a photoresist. film (12) made of a chemically amplified photoresist is applied to a semiconductor substrate (11), and after that, before a developing process, an aqueous solution of a surfactant containing a hydrophilic group is applied to the photoresist film (12), so that a surfactant layer (18) is formed.
Claims9
A method of forming a photoresist pattern comprising:
- coating a chemically amplified photoresist containing an optical acid generating agent onto a substrate to form a photoresist film;
- subjecting said photoresist film formed in said coating step to predetermined patterning exposure;
- performing a PEB process (post-exposure bake process) on said photoresist film to promote an acid catalyst sensitization reaction within an exposed region of a whole region of said photoresist film, and
- developing said photoresist film which has been subjected to the PEB process, to obtain a photoresist pattern with a desired shape;
- wherein a defect preventive agent containing a hydrophobic group and a hydrophilic group is applied to said photoresist film after said photoresist film is formed by coating but before said developing.
2 more elements
Dependencies are inferred from the claim text.