Self-aligned metal-insulator-metal capacitor for integrated circuits
AssigneeMacronix International Co., Ltd.
InventorHenry Chung
Life of this patent
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Abstract
A fabrication method for a self-aligned metal-insulator-metal capacitor is described. A plurality of metal interconnects is provided. A metal interconnect is etched back to form a recess in the metal interconnect using a patterned photoresist as a mask. A capacitor insulator is formed on the resulting structure, partially filling the recess in the metal interconnect and covering other metal interconnects. A top electrode metal layer is then deposited on the capacitor insulator, completely filling the recess in the metal interconnect. The top electrode metal layer that is formed above the recess of the metal interconnect is subsequently removed.
Claims17
A fabrication method for a metal-insulator-metal capacitor, wherein a plurality of metal interconnects formed in an inter-metal dielectric layer is provided, comprising:
- forming a patterned photoresist layer on the inter-metal dielectric layer, wherein the patterned photoresist layer comprises an opening that exposes a metal interconnect;
- back-etching the metal interconnect to form a recess in the metal interconnect using the patterned photoresist as an etching mask;
- removing the patterned photoresist layer;
- forming an insulating layer on the inter-metal dielectric layer, covering other metal interconnects and partially filling the recess of the metal interconnect;
- forming a metal layer on the insulating layer, wherein the metal layer completely fills the recess of the metal interconnect;
- and
- removing the metal layer on the insulating layer that is above the recess of the metal interconnect.
A fabrication method of a metal-insulator-metal capacitor, comprising:
- forming a damascene metal interconnect in an inter-metal dielectric layer;
- back etching the damascene metal interconnect to form a recess in the metal interconnect;
- depositing a capacitor insulator in the recess formed in the metal interconnect, wherein the capacitor insulator only partially fills the recess;
- and
- filling completely the recess formed in the metal interconnect with a metal layer.
Dependencies are inferred from the claim text.