Deposition of organosilsesquioxane films
AssigneeHoneywell International Inc.
InventorNigel P. Hacker
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Abstract
There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.
Claims18
A low k dielectric film comprising a material having the formula
- [HaSiOb]c[(R1)aSiOb]d[(R2)aSiOb]n,
- wherein
- R1 and R2 are members independently selected from C1 to C100 alkyl groups;
- a is less than or equal to 1;
- b is greater than or equal to 1.5;
- and
- c, d and n are members independently selected from the group consisting of the integers greater than 10.
A method for preparing a porous low k dielectric film having a preselected degree of porosity, said film comprising a material having the formula
- [HaSiOb]c[(R1)aSiOb]d[(R2)aSiOb]n,
- wherein
- R1 and R2 are members independently selected from C1 to C100 alkyl groups;
- a is less than or equal to 1;
- b is greater than or equal to 1.5;
- and
- c, d and n are members independently selected from the group consisting of the integers greater than 10, said method comprising:
- (a) depositing a film precursor to form a deposited film precursor, said film precursor comprising a material having the formula
- [R—SiO1.5]x[H—SiO1.5]y,
- wherein
- x+y=n;
- n is an integer between 2 and 30;
- x is an integer between 1 and n;
- y is a whole number between 0 and n;
- R is a C1 to C100 alkyl group;
- and
- (b) curing said deposited film precursor to form a low k dielectric film with a preselected degree of porosity.
An object comprising a low k dielectric film, said film comprising a material having the formula:
- [HaSiOb]c[(R1)aSiOb]d[(R2)aSiOb]n,
- wherein
- R1 and R2 are members independently selected from C1 to C100 alkyl groups;
- a is less than or equal to 1;
- b is greater than or equal to 1.5;
- and
- c, d and n are members independently selected from the group consisting of the integers greater than 10.
Dependencies are inferred from the claim text.