Process for fabricating films of uniform properties on semiconductor devices
AssigneeMicron Technology, Inc.
InventorsGarry Anthony Mercaldi, Don Carl Powell
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Abstract
A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.
Claims27
A control system for a semiconductor processing chamber having at least one temperature sensor and at least one heating element, wherein the at least one sensor and the at least one heating element are in communication with an interior of the semiconductor processing chamber, the control system comprising:
- a temperature regulator in communication with the at least one heating element and the at least one temperature sensor, said temperature regulator having a temperature set point profile for continuously changing a temperature within the semiconductor processing chamber, said temperature set point profile being coincident with material deposition in the semiconductor processing chamber, said material deposition being initiated coincident with detection of an initial interior temperature by the at least one temperature sensor.
A temperature regulation system for a semiconductor reaction chamber, comprising:
- a heating element configured to provide thermal energy within the semiconductor reaction chamber;
- a temperature sensor configured to measure thermal energy within the semiconductor reaction chamber;
- and
- a control system in communication with said heating element and said temperature sensor and configured to change a first signal sent to said heating element during a fabrication process, wherein said change is continuous and in response to a thermal energy measurement by said temperature sensor.
A semiconductor processing assembly, comprising:
- a reaction chamber configured to house a semiconductor workpiece;
- a heater located at least partially within said reaction chamber and configured to emit a thermal output;
- a temperature sensor located at least partially within said reaction chamber and configured to transmit a signal in response to sensing a temperature;
- and
- a temperature regulator in communication with said heater and said temperature sensor and configured to oscillate said thermal output of said heater responsive to receipt of said signal.
A supplement to a fabrication chamber configured to perform a deposition process on a substrate, said supplement comprising:
- a variable substrate temperature generation system configured to operate in cooperation with initiation of the deposition process, said variable substrate temperature generation system comprising:
- a temperature sensor located and configured to sense a temperature in at least one region of the fabrication chamber, said temperature sensor being configured to transmit a signal in response to sensing said temperature;
- a heating element located at least partially within the fabrication chamber;
- and
- a feedback control system in communication with said temperature sensor and said heating element, said feedback control system configured to cause said heating element to steadily alter a heat output within the fabrication chamber in response to a transmission of said signal.
An apparatus for a chamber including a heating element and configured to perform a semiconductor fabrication process, said apparatus comprising:
- a temperature control system configured to communicate with the heating element and to ensure uneven heat distribution across a surface of a substrate positioned within the chamber during a time coincident with at least a portion of said semiconductor fabrication process.
Dependencies are inferred from the claim text.