In-situ post epitaxial treatment process
AssigneeSEH America, Inc.
InventorGerald R. Dietze
Life of this patent
Estimating the term…
Abstract
A process for forming an epitaxial layer on a semiconductor wafer substrate is provided. The process comprises providing a semiconductor wafer substrate and an area for forming an epitaxial layer on said semiconductor wafer substrate. The formation area consists essentially of an epitaxial layer process chamber. The semiconductor wafer substrate is introduced into the epitaxial layer process chamber and an epitaxial layer is formed on at least one surface of the semiconductor wafer substrate. At least one epitaxial layer surface is substantially hydrophobic. Then, a chemical reagent is introduced into said epitaxial layer process chamber. The chemical reagent reacts with the epitaxial layer surface in situ to form an outer layer.
Claims24
A process for forming a protective layer on an epitaxial surface of a semiconductor wafer, comprising the steps of:
- providing an epitaxial reactor;
- introducing a semiconductor wafer substrate into said epitaxial reactor;
- forming an epitaxial layer on at least one surface of said semiconductor wafer substrate, said epitaxial layer surface being hydrophobic;
- introducing a chemical reagent into said epitaxial reactor;
- and
- reacting said chemical reagent with said epitaxial layer to form a protective layer on the surface of said epitaxial layer prior to removing said semiconductor wafer from said epitaxial reactor.
A semiconductor wafer including a protective layer formed on an epitaxial layer which is deposited on a semiconductor substrate, said semiconductor wafer being produced by a process comprising the steps of:
- providing an epitaxial reactor;
- introducing a semiconductor wafer substrate into said epitaxial reactor;
- forming an epitaxial layer on at least one surface of said semiconductor wafer substrate, said epitaxial layer surface being hydrophobic;
- introducing a chemical reagent into said epitaxial reactor;
- and reacting said chemical reagent with said epitaxial layer to form a protective layer on the surface of said epitaxial layer prior to removing said semiconductor wafer from said epitaxial reactor.
A semiconductor wafer including a protective layer formed on an epitaxial layer which is deposited on a semiconductor substrate, said semiconductor wafer being produced by the process comprising the steps of:
- providing an epitaxial reactor, said epitaxial reactor having at least one loading chamber and one wafer reactor chamber;
- introducing a semiconductor wafer substrate into said loading chamber;
- transferring said semiconductor wafer substrate into said wafer reaction chamber;
- forming an epitaxial layer on at least one surface of said semiconductor wafer substrate, said epitaxial layer surface being hydrophobic;
- transferring said semiconductor wafer substrate back into said loading chamber;
- introducing a chemical reagent into said loading chamber;
- and
- reacting said chemical reagent with said epitaxial layer to form a protective layer on the surface of said epitaxial layer.
A semiconductor wafer including a protective layer formed on an epitaxial layer which is deposited on a semiconductor substrate, said semiconductor wafer being produced by the process comprising the steps of:
- providing an epitaxial reactor, said epitaxial reactor having at least one loading chamber, one cooling chamber, and one wafer reactor chamber;
- introducing a semiconductor wafer substrate into said loading chamber;
- transferring said semiconductor wafer substrate into said wafer reaction chamber;
- forming an epitaxial layer on at least one surface of said semiconductor wafer substrate, said epitaxial layer surface being hydrophobic;
- transferring said semiconductor wafer substrate to said cooling chamber;
- introducing a chemical reagent into said loading chamber;
- reacting said chemical reagent with said epitaxial layer to form a protective layer on the surface of said epitaxial layer;
- and
- transferring said semiconductor wafer substrate back into said loading chamber.
A semiconductor wafer including a protective layer formed on an epitaxial layer which is deposited on a semiconductor substrate, said semiconductor wafer being produced by the process comprising the steps of:
- providing an epitaxial reactor, said epitaxial reactor having at least one loading chamber, and at two wafer reactor chambers;
- introducing a semiconductor wafer substrate into said loading chamber;
- transferring said semiconductor wafer substrate into one of said wafer reaction chambers;
- forming an epitaxial layer on at least one surface of said semiconductor wafer substrate, said epitaxial layer surface being hydrophobic;
- transferring said semiconductor wafer substrate to a second of said wafer reaction chambers;
- introducing a chemical reagent into said second reaction chamber;
- reacting said chemical reagent with said epitaxial layer to form a protective layer on the surface of said epitaxial layer;
- and
- transferring said semiconductor wafer substrate back into said loading chamber.
Dependencies are inferred from the claim text.