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US 6,471,770 B2Granted
Method of manufacturing semiconductor substrate
AssigneeToyoda Gosei Co., Ltd.
InventorsMasayoshi Koike, Seiji Nagai
Life of this patent
Estimating the term…
Abstract
A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is dissolved. In this state, the sapphire and GaN layer are separated from each other.
Claims10
A method of manufacturing a semiconductor substrate, comprising:
- forming a semiconductor layer on a first layer through a second layer in a first environment;
- and
- separating said semiconductor layer in a second environment or after having undergone the second environment which is different from the first environment, a coupling force of said second layer with respect to at least one of said first layer and said semiconductor layer being lowered in the second environment,
- wherein distortion is not substantially applied to said semiconductor layer owing to a difference between itself and said first layer in their thermal expansion coefficient.
1 more element
A method of manufacturing a semiconductor substrate, comprising:
- forming a semiconductor layer on a first layer through a second layer, and
- separating said semiconductor layer, thereby forming the semiconductor substrate inclusive of said semiconductor layer,
- wherein said second layer comprises a distortion absorbing layer having a first melting point and an underlying layer having a second melting point higher than the first melting point, said distortion absorbing layer being in a dissolved state at a temperature of an environment where said semiconductor layer is formed.
Dependencies are inferred from the claim text.