Compositions for use in a chemical-mechanical planarization process
AssigneeAir Liquide America Corporation
InventorsAshutosh Misra, Joe G. Hoffman, Anthony J. Schleisman
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Abstract
Provided are methods for making a slurry composition, suitable for use in a chemical-mechanical planarization process. Also provided are compositions made by such methods. The methods comprise combining: (a) abrasive particles; (b) a suspension medium; (c) a peroxygen compound; (d) an etching agent; and (e) an alkyl ammonium hydroxide. The methods and compositions of the present invention are particularly applicable to the semiconductor manufacturing industry.
Claims39
A method for making a slurry composition, suitable for use in a chemical-mechanical planarization process for planarizing an oxide material arranged adjacent to a polishing stop material, comprising combining:
- (a) abrasive particles;
- (b) a suspension medium;
- (c) a peroxygen compound;
- (d) an etching agent effective to etch the oxide material;
- and
- (e) an alkyl ammonium hydroxide,
- wherein the composition is effective for increasing the polish rate selectivity of the oxide material in comparison with the polishing stop material.
A method for making a composition, suitable for use in a chemical-mechanical planarization process for planarizing an oxide material arranged adjacent to a polishing stop material, wherein an abrasive planarizing surface is used in the planarization process, comprising combining:
- (a) a peroxygen compound;
- (b) an etching agent effective to etch the oxide material;
- and
- (c) an alkyl ammonium hydroxide,
- wherein the composition is effective for increasing the polish rate selectivity of the oxide material in comparison with the polishing stop material.
Dependencies are inferred from the claim text.