Semiconductor manufacturing apparatus
AssigneeTokyo Electron Limited
InventorsSatoru Kawakami, Shigemi Murakawa, Mitsuhiro Yuasa, Toshiaki Hongoh
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Abstract
In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.
Claims3
A manufacturing apparatus comprising:
- at least one processing chamber;
- an evacuating unit for decompressing said at least one processing chamber to 1 Torr or less;
- a microwave power supply;
- a planar-array antenna connected to said power supply and disposed in said at least one processing chamber, said antenna having a plurality of slots to generate a plasma;
- a temperature raising unit which maintains a temperature of a substrate at 400° C. or above;
- a gas supply unit introduces a processing gas into said at least one processing chamber, said processing gas containing oxygen, nitrogen or oxygen and nitrogen;
- and
- transporting unit which transports a substrate to be processed in a vacuum,
- said plasma oxdizing, nitriding or oxy-nitriding directly on a surface of said substrate in said at least one processing chamber to deposit an insulator film of a thickness of 1 nm or less.
Dependencies are inferred from the claim text.