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US 6,465,280 B1Granted
In-situ cap and method of fabricating same for an integrated circuit device
AssigneeAnalog Devices, Inc.
InventorsJohn R. Martin, Richard H. Morrison, Jr.
Life of this patent
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Abstract
An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.
Claims31
A method of fabricating an in-situ cap for a micromachined device comprising:
- fabricating a micromachined element on a substrate with a sacrificial support layer intact;
- fabricating a cap sacrificial support layer over said micromachined element;
- forming a cap structure in said sacrificial support layers covering said micromachined element;
- and
- removing the sacrificial support layers within said cap structure to release said micromachined element leaving an in-situ cap integrated with the element.
2 more elements
A method of fabricating an in-situ cap for an integrated circuit element comprising:
- fabricating an integrated circuit element on a substrate;
- forming a support layer over said integrated circuit element;
- and forming a cap structure in said support layer covering said integrated circuit element.
Dependencies are inferred from the claim text.