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AssigneeCanon Kabushiki Kaisha
InventorsIchiro Nomura, Masato Yamanobe, Hidetoshi Suzuki, Toshihiko Takeda, Tatsuya Iwasaki
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In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, wherein the electron-emitting device comprises a surface conduction electron-emitting device.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, wherein the electron-emitting device exhibits a characteristic in which an emission current is uniquely determined with respect to a device voltage.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, wherein the electron-emitting device exhibits a characteristic in which a device current is uniquely determined with respect to a device voltage.
An electron beam apparatus, comprising:
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, wherein the atmosphere is effective to prevent materials containing carbon as a main ingredient from depositing on the electron-emitting device.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, further comprising a modulator for modulating electron beams emitted from the electron-emitting device.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, further comprising a modulation signal generator for applying a modulation signal to the electron-emitting device.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, wherein a modulation signal with varying pulse widths is applied to the electron-emitting device.
An electron beam apparatus, comprising an enclosure in which an electron-emitting device including an electron-emitting region is disposed, wherein an interior of said enclosure is maintained under an atmosphere in which a pulse-width-dependent variation of a peak emission current of the electron-emitting device is not greater than 5%, wherein a modulation signal with varying voltages is applied to the electron-emitting device.
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
An electron beam apparatus, comprising:
Dependencies are inferred from the claim text.