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US 6,458,718 B1Granted
Fluorine-containing materials and processes
AssigneeASM Japan K.K.
InventorMichael A. Todd
Life of this patent
Estimating the term…
Abstract
Chemical precursors that contain carbon atoms and fluorine atoms can be activated under a variety of conditions to deposit fluorine-containing materials. Chemical precursors of the formula (F3C)4−m−nMXmRn, are preferred, wherein M is Si or Ge; X is halogen; R is H or D; m is 0, 1, 2 or 3; and n is 0, 1, 2, or 3; with the proviso that (m+n)≦3.
Claims47
A process for depositing a material onto a surface, comprising
- providing a substrate;
- providing a chemical precursor of the formula (F3C)4−m−nMXmRn, wherein M is Si or Ge;
- X is halogen;
- R is H or D;
- m is 0, 1, 2 or 3;
- and n is 0, 1, 2, or 3;
- with the proviso that (m+n)≦3;
- and
- activating said chemical precursor to thereby deposit a fluorine-containing material onto said substrate.
6 more elements
A chemical vapor deposition process for depositing a dielectric film onto a surface, comprising
- providing a chemical vapor deposition chamber having disposed therein a substrate;
- introducing a gas to said chamber, wherein said gas comprises a chemical precursor selected from the group consisting of (F3C)SiH3, (F3C)2SiH2, (F3C)SiD3, (F3C)2SiD2, (F3C)SiFH2, (F3C)SiF2H, (F3C)SiF3, (F3C)SiFD2, and (F3C)SiF2D;
- and
- reacting said chemical precursor to deposit onto said substrate a film having a dielectric constant of about 2.7 or lower.
1 more element
A process for:
- making a porous material, comprising
- providing an oxygen source;
- providing a compound of the formula (F3C)4−m−nMXmRn, wherein M is Si or Ge;
- X is halogen;
- R is H or D;
- m is 0, 1,2 or 3;
- and n is 0, 1, 2, or 3;
- with the proviso that (m+n)≦3;
- providing a substrate;
- activating said oxygen source and said compound at a temperature of about 300° C. or less to thereby deposit an oxygen-containing film onto said substrate;
- and
- heating said oxygen-containing film to a temperature in the range of about 150° C. to about 400° C. to form a porous film.
9 more elements
Dependencies are inferred from the claim text.