Organic semiconductor devices
AssigneeLucent Technologies Inc.
InventorZhenan Bao
Life of this patent
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Abstract
The specification describes a thin film transistor device in which the semiconductor layer is a fluorene oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units. These oligomers can be deposited by simple evaporation to give desirable semiconductor properties, e.g. high mobility.
Claims7
A method for making an integrated circuit thin film transistor device comprising a plurality of thin film field effect transistors formed on a substrate, said plurality of thin film field effect transistors each comprising a source electrode, a drain electrode, a gate electrode, and an organic semiconductor active layer,
- the invention characterized in that the organic semiconductor layer is formed by evaporating a thin film of a fluorene oligomer onto the substrate, the oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
A method for making an integrated circuit thin film transistor device by the steps comprising:
- a. depositing a layer of an organic semiconductor material on a substrate,
- b. forming a source electrode and a drain electrode on said layer, said source electrode and drain electrode separated by a channel region,
- c. depositing a dielectric layer covering both said source electrode and said drain electrode, and
- d. forming a gate electrode overlying said channel region,
- the invention characterized in that the organic semiconductor material is formed by evaporating a thin film of a fluorene oligomer onto the substrate, the oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
A method for the manufacture of an integrated circuit thin film transistor device comprising the steps of:
- a. forming a source electrode and a drain electrode on a substrate, the source electrode and the drain electrode being spaced apart leaving a channel region therebetween,
- b. depositing a dielectric layer covering the source electrode, the drain electrode, and the channel region,
- c. forming a gate electrode overlying the channel region,
- the invention characterized in that the organic semiconductor layer is formed by evaporating a thin film of a fluorene oligomer onto the substrate, the oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
An integrated circuit thin film transistor device comprising a plurality of thin film field effect transistors formed on a substrate, said plurality of thin film field effect transistors each comprising a source electrode, a drain electrode, a gate electrode, and an organic semiconductor active layer, the organic semiconductor layer comprising a fluorene oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
An integrated circuit thin film transistor device comprising:
- a. a layer of an organic semiconductor material on a substrate,
- b. a source electrode and a drain electrode on said layer, said source electrode and drain electrode separated by a channel region,
- c. a dielectric layer covering both said source electrode and said drain electrode, and
- d. a gate electrode overlying said channel region,
- the invention characterized in that the organic semiconductor material is a fluorene oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
An integrated circuit thin film transistor device comprising:
- a. a source electrode and a drain electrode on a substrate, the source electrode and the drain electrode being spaced apart leaving a channel region therebetween,
- b. a dielectric layer covering the source electrode, the drain electrode, and the channel region,
- c. a gate electrode overlying the channel region,
- the invention characterized in that the organic semiconductor layer is a fluorene oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
An injection laser comprising:
- a. a semiconductor layer having a top surface and bottom surface,
- b. a first gate electrode, source electrode, and drain electrode on the top surface of the semiconductor layer,
- c. a second gate electrode, source electrode, and drain electrode on the bottom surface of the semiconductor layer,
- the invention characterized in that the semiconductor layer is a fluorene oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units.
Dependencies are inferred from the claim text.