Directing a flow of gas in a substrate processing chamber
AssigneeApplied Materials, Inc.
InventorsLaxman Murugesh, Padmanaban Krishnaraj, Michael Cox, Canfeng Lai, Narendra Dubey, Tom K. Cho, Sudhir Ram Gondhalekar, Lily L. Pang
Life of this patent
Estimating the term…
Abstract
A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.
Claims61
A substrate processing chamber comprising a sidewall and a ceiling, a first gas distributor adapted to provide a process gas into the chamber to process a substrate, a second gas distributor comprising an inlet adapted to receive a remotely energized cleaning gas and an outlet adapted to direct the remotely energized cleaning gas preferentially across a surface of one or more of the sidewall and ceiling in the chamber to clean the surface, and an exhaust to exhaust one or more of the process gas and cleaning gas from the chamber.
A substrate processing chamber having a sidewall and a ceiling, the chamber comprising:
- first means for providing a process gas into the chamber to process the substrate;
- second means for energizing and directing a cleaning gas preferentially across a surface of one or more of the sidewall and ceiling in the chamber to clean the surface;
- and
- an exhaust to exhaust one or more of the process gas and cleaning gas from the chamber.
An apparatus capable of depositing material on a substrate, the apparatus comprising:
- a deposition chamber having a sidewall, a ceiling, a support to support a substrate, a first gas distributor to provide a deposition gas to the deposition chamber, a plasma generator to form a plasma from the deposition gas to deposit material on the substrate, and an exhaust to exhaust gas from the deposition chamber;
- a remote chamber adapted to energize a cleaning gas;
- and
- a second gas distributor connecting the remote chamber to the deposition chamber, the second gas distributor adapted to direct a flow of the energized cleaning gas preferentially across a surface of one or more of the sidewall and ceiling in the deposition chamber.
A substrate processing apparatus comprising:
- a substrate processing chamber comprising a sidewall, a ceiling, a support to support a substrate, a first gas distributor to provide a process gas to the substrate processing chamber, a plasma generator to form a plasma from the process gas to process the substrate, and an exhaust to exhaust gas from the substrate processing chamber;
- a remote chamber adapted to energize a cleaning gas;
- and
- a second gas distributor connecting the remote chamber to the substrate processing chamber to introduce the energized cleaning gas at a location that is distal from the exhaust and direct the cleaning gas preferentially across a surface of one or more of the sidewall and ceiling in the substrate processing chamber.
A gas distributor capable of distributing a gas in a substrate processing chamber, the gas distributor comprising an inlet for receiving a remotely energized cleaning gas and one or more gas outlets adapted to direct the remotely energized cleaning gas preferentially across a surface of one or more of a sidewall or a ceiling in the chamber to clean the surface.
A substrate processing chamber having a sidewall and a ceiling, the chamber comprising:
- a first gas distributor adapted to provide a process gas into the chamber to process a substrate;
- a second gas distributor comprising an inlet adapted to receive a remotely energized cleaning gas, a gas outlet, and a baffle, wherein the gas outlet and baffle cooperate to direct the remotely energized cleaning gas preferentially across a surface of one or more of the sidewall or ceiling in the chamber to clean the surface;
- and
- an exhaust to exhaust one or more of the process gas and cleaning gas from the chamber.
A substrate processing chamber comprising:
- a sidewall, a ceiling and a substrate support capable of supporting a substrate;
- a gas distributor adapted to provide a remotely energized gas into the chamber, the gas distributor comprising a gas inlet adapted to receive the remotely energized gas, a baffle having a substantially ridged surface, and gas outlets on the substantially ridged surface, wherein the substantially ridged surface and gas outlets cooperate to direct the remotely energized gas preferentially across a surface of one or more of the sidewall or ceiling in the chamber;
- a gas energizer to form the remotely energized gas;
- and
- an exhaust to exhaust the gas.
A substrate processing chamber comprising:
- a sidewall, a ceiling and a substrate support capable of supporting a substrate;
- a gas distributor adapted to provide a remotely energized gas into the chamber, the gas distributor comprising a gas inlet adapted to receive the remotely energized gas, and arcuate prongs having gas outlets therebetween, wherein the arcuate prongs and gas outlets cooperate to direct the remotely energized gas preferentially across a surface of one or more of the sidewall or ceiling in the chamber;
- a gas energizer to form the remotely energized gas;
- and
- an exhaust to exhaust the gas.
Dependencies are inferred from the claim text.