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US 6,448,622 B1Granted
Polycrystalline silicon-germanium films for micro-electromechanical systems application
AssigneeThe Regents of the University of California
InventorsAndrea Franke, Roger T. Howe, Tsu-Jae King
Life of this patent
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Abstract
This invention relates to micro-electromechanical systems using silicon-germanium films. Such a system includes one or more layers of Si1−xGex, deposited on a substrate, where 0<x≦1. One or more transistors can be formed on the substrate.
Claims13
A micro-electromechanical system, comprising:
- a substrate;
- one or more structural layers of Si1−xGex, deposited on the substrate, where 0<x≦1;
- and
- one or more transistors formed on the substrate.
1 more element
A micro-electromechanical system, comprising:
- a substrate;
- one or more structural layers of Si1−xGex, formed on the substrate, where 0<x≦1;
- at least portions of one or more sacrificial layers of silicon-germanium formed under the respective structural layers, where the germanium content of the one or more sacrificial layers is greater than the germanium content of the respective structural layers;
- and
- one or more transistors formed on the substrate.
2 more elements
A micro-electromechanical system, comprising:
- a substrate;
- one or more structural layers of Si1−xGex, formed on the substrate, where 0<x≦1 and wherein the germanium concentration of at least one structural layer varies through its depth;
- and
- one or more transistors formed on the substrate.
1 more element
A micro-electromechanical system, comprising:
- a substrate;
- one or more transistors formed on the substrate;
- and
- one or more structural layers of Si1−xGex, deposited onto an upper level of a metal interconnect of the one or more transistors, where 0<x≦1.
1 more element
Dependencies are inferred from the claim text.