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US 6,448,612 B1Granted
Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMinoru Miyazaki, Akane Murakami, Baochun Cui, Mutsuo Yamamoto
Life of this patent
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Abstract
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Claims42
A semiconductor device comprising:
- a pixel thin film transistor and a driver circuit for driving said pixel thin film transistor, said pixel thin film transistor comprising:
- a first semiconductor layer having at least a first low-resistivity impurity region and a first high-resistivity impurity region over a substrate;
- a first gate electrode adjacent to said first semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first high-resistivity impurity region does not overlap with said first gate electrode, and
- said driver circuit comprising at least one thin film transistor, said at least one thin film transistor comprising:
- a second semiconductor layer having at least a second low-resistivity impurity region and a second high-resistivity impurity region over said substrate;
- a second gate electrode adjacent to said second semiconductor layer with a gate insulating film interposed therebetween,
- wherein said second high-resistivity impurity region has a region overlapping with said second gate electrode.
5 more elements
A semiconductor device comprising:
- a pixel thin film transistor and a driver circuit for driving said pixel thin film transistor, said pixel thin film transistor comprising:
- a first semiconductor layer having at least a first low-resistivity impurity region and a first high-resistivity impurity region over a substrate;
- a first gate electrode adjacent to said first semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first high-resistivity impurity region does not overlap with said first gate electrode, and
- said driver circuit comprising at least one thin film transistor, said at least one thin film transistor comprising:
- a second semiconductor layer having at least a second low-resistivity impurity region and a second high-resistivity impurity region over said substrate;
- a second gate electrode adjacent to said second semiconductor layer with a gate insulating film interposed therebetween,
- wherein said second high-resistivity impurity region has a region overlapping with said second gate electrode and has a region not overlapping with said second gate electrode.
5 more elements
A semiconductor device comprising:
- a pixel thin film transistor and a driver circuit for driving said pixel thin film transistor, said pixel thin film transistor comprising:
- a semiconductor layer comprising a first impurity region and a second impurity region adjacent to said first impurity region over a substrate;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first impurity region and said second impurity region do not overlap with said gate electrode, and
- said driver circuit comprising at least one thin film transistor, said at least one thin film transistor comprising:
- a semiconductor layer comprising a third impurity region and a fourth impurity region adjacent to said third impurity region over said substrate;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said third impurity region has a region overlapping with said gate electrode.
7 more elements
A semiconductor device comprising:
- a pixel thin film transistor and a driver circuit for driving said pixel thin film transistor, said pixel thin film transistor comprising:
- a semiconductor layer comprising a first impurity region and a second impurity region adjacent to said first impurity region over a substrate, said first impurity region having a higher sheet resistance than said second impurity region;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first impurity region does not overlap with said gate electrode, and
- said driver circuit comprising at least one thin film transistor, said at least one thin film transistor comprising:
- a semiconductor layer comprising a third impurity region and a fourth impurity region adjacent to said third impurity region over said substrate, said third impurity region having a higher sheet resistance than said fourth impurity region;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said third impurity region has a region overlapping with said gate electrode.
7 more elements
A semiconductor device comprising:
- a pixel thin film transistor comprising:
- a semiconductor layer comprising a first impurity region and a second impurity region adjacent to said first impurity region over a substrate;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first impurity region and said second impurity region do not overlap with said gate electrode, and
- a CMOS circuit comprising an n-channel thin film transistor and a p-channel thin film transistor, said n-channel thin film transistor comprising:
- a semiconductor layer comprising a third impurity region and a fourth impurity region adjacent to said third impurity region over said substrate;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said third impurity region has a region overlapping with said gate electrode.
7 more elements
A semiconductor device comprising:
- a pixel thin film transistor comprising:
- a semiconductor layer comprising a first impurity region and a second impurity region adjacent to said first impurity region over a substrate, said first impurity region having a higher sheet resistance than said second impurity region;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first impurity region does not overlap with said gate electrode, and
- a CMOS circuit comprising an n-channel thin film transistor and a p-channel thin film transistor, said n-channel thin film transistor comprising:
- a semiconductor layer comprising a third impurity region and a fourth impurity region adjacent to said third impurity region over said substrate, said third impurity region having a higher sheet resistance than said fourth impurity region;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said third impurity region has a region overlapping with said gate electrode.
7 more elements
A semiconductor device comprising:
- a pixel thin film transistor comprising:
- a semiconductor layer comprising a first impurity region and a second impurity region adjacent to said first impurity region over a substrate;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first impurity region and said second impurity region do not overlap with said gate electrode, and
- an inverter circuit comprising an n-channel thin film transistor and a p-channel thin film transistor, said n-channel thin film transistor comprising:
- a semiconductor layer comprising a third impurity region and a fourth impurity region adjacent to said third impurity region over said substrate;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said third impurity region has a region overlapping with said gate electrode.
7 more elements
A semiconductor device comprising:
- a pixel thin film transistor comprising:
- a semiconductor layer comprising a first impurity region and a second impurity region adjacent to said first impurity region over a substrate, said first impurity region having a higher sheet resistance than said second impurity region;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said first impurity region does not overlap with said gate electrode, and
- an inverter circuit comprising an n-channel thin film transistor and a p-channel thin film transistor, said n-channel thin film transistor comprising:
- a semiconductor layer comprising a third impurity region and a fourth impurity region adjacent to said third impurity region over said substrate, said third impurity region having a higher sheet resistance than said fourth impurity region;
- and
- a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,
- wherein said third impurity region has a region overlapping with said gate electrode.
7 more elements
Dependencies are inferred from the claim text.