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AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Sien G. Kang, Igor J. Malik
Estimating the term…
A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.
A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer, said method comprising the steps of:
A computer readable medium having computer readable code embodied therein for causing a system to perform the steps of:
A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer, said method comprising the steps of:
Dependencies are inferred from the claim text.