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US 6,448,102 B1Granted
Method for nitride based laser diode with growth substrate removed
AssigneeXerox Corporation
InventorsMichael A. Kneissl, David P. Bour, Ping Mei, Linda T. Romano
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Abstract
A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after a thermally conducting substrate has been bonded to the side opposite the sapphire substrate.
Claims12
A method for making a nitride laser diode array structure comprising the operations of:
- providing a semiconductor membrane having an insulating substrate attached on a first side of said semiconductor membrane;
- attaching a metallic interlayer to a second side of said semiconductor membrane;
- attaching a thermally conducting substrate to said metallic interlayer:
- removing said insulating substrate from said first side of said semiconductor membrane by exposing said insulating substrate to laser light;
- and
- placing a metal layer on said first side of said semiconductor membrane.
3 more elements
A method for making a nitride laser diode array comprising the operations of:
- providing a semiconductor membrane having a first crystal plane, said semiconductor membrane having an insulating substrate attached to a first side of said semiconductor membrane and having a plurality of metal electrodes attached to a second side of said semiconductor membrane;
- attaching a thermally conducting substrate having a second crystal plane to said first side of said semiconductor membrane such that said first and said second crystal planes are aligned;
- removing said insulating substrate from said first side of said semiconductor membrane by exposing said insulating substrate to laser light;
- and
- placing a metal layer on said first side of said semiconductor membrane.
2 more elements
A method for making a nitride laser diode array comprising the operations of:
- providing a semiconductor membrane having a first crystal plane, said semiconductor membrane having an insulating substrate attached to a first side of said semiconductor membrane and having a plurality of metal electrodes attached to a second side of said semiconductor membrane;
- attaching a thermally conducting substrate having a second crystal plane to said first side of said semiconductor membrane such that first and said second crystal planes are aligned;
- removing said insulating substrate from said first side of said semiconductor membrane by exposing said insulating substrate to laser light;
- placing a metal layer on said first of said semiconductor membrane, said trench dividing said metal layer and said semiconductor membrane into two separate sections.
1 more element
Dependencies are inferred from the claim text.