Semiconductor memory device with a refresh function
AssigneeNEC Corporation
InventorYasuhiro Nanba
Life of this patent
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Abstract
A semiconductor memory device having a refresh function to restore data stored in a memory cell, comprises a delay switching block for delaying a signal for deactivating a word line in a self-refresh operation as compared with the signal in a CBR refresh operation. The delay switching block comprises: a first signal path for allowing the signal for deactivating the word line to pass; a second signal path for delaying the signal for deactivating the word line by a predetermined time; and a path selecting block for selecting the first signal path in the CBR refresh operation, and for selecting the second signal path in the self-refresh operation.
Claims6
A semiconductor memory device having a refresh function to restore data stored in a memory cell, comprising:
- a delay switching block for delaying a signal for deactivating a word line in a self-refresh operation as compared with the signal in a CBR refresh operation, wherein said delay switching block comprises:
- a first signal path for enabling the signal for deactivating the word line to pass;
- a second signal path for delaying the signal for deactivating the word line by a predetermined time;
- and
- a path selecting block for selecting the first signal path for the CBR refresh operation, and for selecting the second signal path for the self-refresh operation, so as to enable the signal to pass through either one of said first and second signal paths depending on whether there is the CBR refresh operation or the self refresh operation.
Dependencies are inferred from the claim text.