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US 6,445,428 B1Granted
Thin film transistor for a liquid crystal display device and a fabrication process thereof
AssigneeFujitsu Limited
InventorsTetsuya Fujikawa, Katsunori Misaki
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Abstract
A thin-film transistor of a liquid crystal display device includes an ohmic electrode such that the ohmic electrode is formed of a first conductor film of a refractory metal element defined by a first lateral edge and a second conductor film containing Al and defined by a second lateral edge, wherein the second lateral edge is receded with respect to the first lateral edge when viewed in a direction perpendicular to a substrate on which the thin-film transistor is formed.
Claims9
A method of fabricating a thin-film transistor, comprising the steps of:
- forming a gate electrode on a substrate;
- forming a gate insulation film on said substrate so as to cover said gate electrode;
- forming a semiconductor film on said gate insulation film;
- forming an electrode layer on said semiconductor film by depositing a first conductor layer containing a refractory metal element and a second conductor layer containing Al consecutively;
- applying a dry etching process to said electrode layer to form a first ohmic electrode parttern located at a first side of said gate electrode and a second ohmic electrode pattern located at a second, opposite side of said gate electrode;
- covering said first and second ohmic electrode patterns by a protective insulation film such that said protective insulation film contacts each of said first and second ohmic electrode patterns intimately;
- forming a contact hole in said protective insulation film so as to expose said second conductor layer at said contact hole;
- and
- forming a pixel electrode on said protective insulation film to as to achieve an electrical contact with said second ohmic electrode pattern at said contact hole.
6 more elements
A method of fabricating a liquid crystal display device comprising:
- a first substrate;
- a second substrate facing said first substrate;
- a liquid crystal layer confined between said first substrate and said second substrate;
- a thin-film transistor provided on said first substrate;
- a protective insulation film covering said thin-film transistor;
- and a pixel electrode provided on said protective insulation film in electrical connection with said thin-film transistor, said method comprising the steps of:
- forming said gate electrode on said first substrate;
- forming a gate insulation film on said first substrate so as to cover said gate electrode;
- forming said semiconductor film on said gate insulation film;
- forming an electrode layer on said semiconductor film by depositing a first conductor layer containing a refractory metal element and a second conductor layer containing Al consecutively;
- applying a dry etching process to said electrode layer to form a first ohmic electrode pattern located at a first side of said gate electrode and a second ohmic electrode pattern located at a second, opposite side of said gate electrode;
- covering said first and second ohmic electrode patterns by said protective insulation film such that said protective insulation film contacts each of said first and second ohmic electrode patterns intimately;
- forming a contact hole in said protective insulation film so as to expose said second conductor layer at said contact hole;
- and
- forming said pixel electrode on said protective insulation film to as to achieve an electrical contact with said second ohmic electrode pattern at said contact hole.
12 more elements
Dependencies are inferred from the claim text.