Semiconductor device having an improved multi-layer interconnection structure and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHideyo Haruhana, Hiroyuki Amishiro, Akihiko Harada
Life of this patent
Estimating the term…
Abstract
A semiconductor device, having a multi-layer interconnection structure, is provided which comprises a semiconductor substrate and a plurality of interlayer insulating films formed on the semiconductor substrate. A plurality of conductive leads are formed in the interlayer insulating films. In one of the interlayer insulting films having conductive lead or leads, at least one conductive plug is formed vertically to connect the conductive leads in different interlayer insulating films. Further, adjacent conductive leads may be formed in an adjacent interlayer insulating films are connected together to form a unified conductive lead.
Claims6
A semiconductor device having a multi-layer interconnection structure, said semiconductor device comprising:
- a semiconductor substrate;
- a plurality of interlayer insulating films formed on the semiconductor substrate;
- a dielectric film formed between at least one pair of adjacent interlayer insulating films;
- a plurality of conductive leads formed in the interlayer insulating films;
- and
- at least one conductive plug formed in at least one of the interlayer insulating films having at least one conductive lead, said conductive plug connecting at least a pair of conductive leads in the different interlayer insulating films,
- wherein conductive leads are formed in each interlayer insulating film of said at least one pair to form a capacity element.
A semiconductor device having a multi-layer interconnection structure, said semiconductor device comprising:
- a semiconductor substrate;
- a plurality of interlayer insulating films formed on the semiconductor substrate;
- a dielectric film formed between at least one pair of adjacent interlayer insulating films;
- a plurality of conductive leads formed in the interlayer insulating films;
- and
- wherein at least a pair of adjacent conductive leads, respectively formed in adjacent interlayer insulating films, are connected together to form a unified thick conductive film, and
- wherein conductive leads are formed in each interlayer insulating film of said at least one pair to form a capacity element.
A semiconductor device having a multi-layer interconnection structure, said semiconductor device comprising:
- a semiconductor substrate;
- a plurality of interlayer insulating films formed on the semiconductor substrate;
- at least a dielectric film formed between the adjacent interlayer insulating films;
- a plurality of conductive leads formed in the interlayer insulating films;
- and
- at least a pair of conductive leads formed in the interlayer insulating films adjacent to the dielectric film;
- said pair of conductive leads being formed at opposite positions to form a capacity element.
Dependencies are inferred from the claim text.