Semiconductor module
AssigneeKabushiki Kaisha Toyoda Jidoshokki Seisakusho
InventorsKenichi Sofue, Hiromitsu Yoshiyama, Toshinari Fukatsu, Toshiaki Nagase
Life of this patent
Estimating the term…
Abstract
A plurality of MOS transistors are arranged on the top surface of a conductor substrate which is a drain electrode. The drain contact of each MOS transistor is connected to the conductor substrate. The source contact of each MOS transistor is connected to the output conductor path which is a source electrode through a bonding wire. The gate contact of each MOS transistor is connected to a drive signal conductor path which is a gate electrode through a bonding wire. The source contacts of the MOS transistors are interconnected through a bridge electrode and a bonding wire.
Claims4
A semiconductor module in which a plurality of semiconductor elements are interconnected in parallel to each other, comprising:
- a first conductor, having an input terminal, connected to a first main current contact area of each of the plurality of semiconductor elements;
- a second conductor, having an output terminal connected to a second main current contact area of each of the plurality of semiconductor elements;
- a third conductor connected to a drive signal input contact area of each of the plurality of semiconductor elements;
- and
- a fourth conductor having an interconnection with the second main current contact areas of semiconductor elements positioned at a predetermined distal interval from said output terminal, such that semiconductor elements positioned proximal to the output terminal have no contact areas connected to the fourth conductor, wherein
- determination of the predetermined interval is dependent on inductance present in the interconnection and the semiconductor elements, and
- the plurality of semiconductor elements are drive-controlled based on a potential difference given through said second and third conductors.
A semiconductor module in which a plurality of semiconductor elements are interconnected in parallel to each other, comprising:
- a first conductor connected to a first main current contact area of each of the plurality of semiconductor elements;
- a second conductor connected to a second main current contact area of each of the plurality of semiconductor elements;
- a third conductor connected to a drive signal input contact area of each of the plurality of semiconductor elements;
- first, second, and third terminals directly connected to said first, second and third conductors respectively;
- and
- a fourth conductor having an interconnection with the second main current contact areas of semiconductor elements positioned at a predetermined distal interval from said second terminal, such that semiconductor elements positioned proximal to the second terminal have no contact areas connected to the fourth conductor, wherein
- determination of the predetermined interval is dependent on inductance present in the interconnection and the semiconductor elements;
- and
- the plurality of semiconductor elements are drive-controlled based on a potential difference given through said second and third conductors.
A semiconductor module in which a plurality of MOS transistors are interconnected in parallel to each other, comprising:
- a source electrode, having an output terminal, connected to a source contact area of each of the plurality of MOS transistors;
- and
- a bridge electrode having an interconnection with source contact areas of MOS transistors provided at a predetermined distal interval from said output terminal such that the MOS transistors positioned proximal to the output terminal have no contact areas connected to the bridge electrode, wherein
- determination of the predetermined interval is dependent on inductance present in the interconnection.
A semiconductor module in which a plurality of MOS transistors are interconnected in parallel to each other, comprising:
- a source electrode connected to a source contact area of each of the plurality of MOS transistors;
- a source terminal, connected directly to said source electrode, outputting a source current from said semiconductor module, and
- a bridge electrode having an interconnection with source contact areas of MOS transistors provided at a predetermined distal interval from said source electrode such that the MOS transistors positioned proximal to the source electrode have no contact areas directly connected to the bridge electrode, wherein
- determination of the predetermined interval is dependent on inductance present in the interconnection.
Dependencies are inferred from the claim text.