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US 6,445,038 B1Granted
Silicon on insulator high-voltage switch
AssigneeInfineon Technologies AG
InventorJenoe Tihanyi
Life of this patent
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Abstract
An SOI high-voltage switch with an FET structure, in which a drift zone of one conductivity type is provided between a gate electrode and a drain electrode in the drain region. Pillar-like trenches in the form of a grid are incorporated in the drift zone and are filled with semiconductor material of the other conductivity type.
Claims13
An SOI high-voltage switch with an FET structure, comprising:
- a drift zone of a first conductivity type provided between a gate electrode and a drain electrode in a drain region of the FET;
- pillar-like trenches formed in the drift zone which are filled with semiconductor material of a second conductivity type which is opposite to the first conductivity type;
- and
- a plurality of field plates in a region between the gate electrode and the drain electrode in an insulator layer, the plurality of field plates arranged above one another and offset with respect to one another in a drift direction.
1 more element
Dependencies are inferred from the claim text.