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AssigneeSony Corporation
InventorKiwamu Adachi
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A method of manufacturing an electronic component having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the material layer (for example, a tantalum oxide film formed by the CVD process) by locally subjecting such material layer to different kinds of treatment, such as nitriding and oxidation, is provided. There is also provided a method of manufacturing a semiconductor device having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the same material layer by locally subjecting such material layer to different kinds of treatment. There is still also provided a semiconductor device having a capacitor element and a resistor element thus formed. According to the present invention, a material excellent as that for capacitor element and also suitable for other applications is used, and the material is effectively converted into other materials suitable for the capacitor element and resistor element, respectively. Thus the present invention can add value of such material, and allows a positive attitude to be taken in facility investment for such material and introduction of other similar new materials.
A method of manufacturing an electronic component having a capacitor element and a resistor element, comprising:
A method of manufacturing an electronic component, the component further including a capacitor and a resistor, comprising:
A method of manufacturing a semiconductor having a capacitor and a resistor on a single substrate, comprising:
A method of manufacturing a semiconductor having a capacitor and a resistor, wherein the capacitor and resistor are individually formed by introducing into a tantalum oxide film (TaxOy), where x and y are integers, oxygen within an area for forming the capacitor, and nitrogen within an area for forming the resistor, and the resistor comprises tantalum oxynitride formed by a CVD process to ensure that the thickness is precisely controlled.
A semiconductor device having a capacitor and a resistor, wherein the capacitor and the resistor are individually formed in a material layer having a single composition by locally subjecting the material layer to different kinds of treatment;
Dependencies are inferred from the claim text.