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US 6,445,024 B1Granted
Ramp-edge structured tunneling devices using ferromagnet electrodes
AssigneeThe United States of America as represented by the Department of Energy
InventorsChuhee Kwon, Quanxi Jia
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Abstract
The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La0.7Sr0.3) MnO3, ferromagnetic electrodes and a SrTiO3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.
Claims6
An edge-geometry magnetic tunnel junction device comprising:
- a substrate;
- a first ferromagnetic electrode upon said substrate;
- a spacing layer of an insulating or highly resistive material upon a portion of said first ferromagnetic electrode, said first ferromagnetic electrode and said insulating or highly resistive material further characterized as having one side of this combination configured in a ramp edge shape;
- a thin layer of an insulating material upon the ramp edge of said combination of said first ferromagnetic electrode and said insulating or highly resistive material;
- and,
- a second ferromagnetic electrode upon said thin layer of insulating material.
3 more elements
Dependencies are inferred from the claim text.