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US 6,445,021 B1Granted
Negative differential resistance reoxidized nitride silicon-based photodiode and method
AssigneeInternational Business Machines Corporation
InventorsFen Chen, Roger Aime Dufresne, Baozhen Li, Alvin Wayne Strong
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Abstract
A photodiode that exhibits a photo-induced negative differential resistance region upon biasing and illumination is described. The photodiode includes an N+ silicon substrate, a silicon nitride layer formed on the N+ silicon substrate, a reoxidized nitride layer formed on the silicon nitride layer and a N+ polysilicon layer formed on at least a portion of the reoxidized nitride layer.
Claims10
A photodiode comprising:
- an N+ silicon substrate;
- a layer of silicon nitride formed on said N+ silicon substrate;
- a layer of reoxidized nitride formed on said silicon nitride layer;
- and
- a layer of N+ polysilicon formed on at least a portion of said reoxidized layer, said photodiode exhibiting a negative differential resistance region upon biasing said N+ silicon substrate positively with respect to said N+ polysilicon layer and exposing said photodiode to illumination.
2 more elements
An apparatus embodying a photodiode, said photodiode comprising:
- a layer of silicon nitride formed on an N+ silicon substrate;
- a layer of reoxidized nitride formed on said silicon nitride layer;
- and
- a layer of N+ polysilicon formed on at least a portion of said reoxidized layer, said photodiode exhibiting a photo-induced negative differential resistance region upon biasing said N+ silicon substrate positively with respect to said N+ polysilicon layer and exposing said photodiode to illumination.
1 more element
Dependencies are inferred from the claim text.