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US 6,445,009 B1Granted
Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
AssigneeCentre National De La Recherche Scientifique
InventorsNicolas Pierre Grandjean, Jean Massies, Benjamin Gérard Pierre Damilano, Fabrice Semond, Mathieu Leroux
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Abstract
A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.
Claims28
A device comprising:
- a silicon substrate;
- and
- a coating provided on said substrate, said coating comprising at least one stacking including a plane of quantum dots of GaN or GaInN emitting visible light at ambient temperature in a layer of AlN or GaN respectively.
Dependencies are inferred from the claim text.