Light emitting diodes with spreading and improving light emitting area
AssigneeUni Light Technology Inc.
InventorsBor-Jen Wu, Nae-Guann Yih, Chien-An Chen, Nai-Chuan Chen
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AssigneeUni Light Technology Inc.
InventorsBor-Jen Wu, Nae-Guann Yih, Chien-An Chen, Nai-Chuan Chen
Estimating the term…
The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape corresponds to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.
A light semiconductor device comprising:
A light emitting diode device comprising:
A light emitting diode device comprising:
Dependencies are inferred from the claim text.