Semiconductor light emitting device and manufacturing method thereof
AssigneeSony Corporation
InventorsTakehiro Taniguchi, Hironobu Narui
Life of this patent
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Abstract
In semiconductor light emitting sections capable of effectively improving electric cross-talk and effectively avoiding short-circuit between each of light emitting devices, in which a plurality of semiconductor light emitting sections are formed to a semiconductor substrate, and at least one of electrodes for the semiconductor light emitting sections and bonding pads lead out electrically from the electrodes and connected with external leads are formed on one main surface of a semiconductor substrate, a high resistance isolation region is formed, facing the main surface of the semiconductor substrate, below a portion between adjacent conductor layers for electrical leading from the electrode to the bonding pad.
Claims7
A semiconductor light emitting device in which a plurality of semiconductor light emitting sections are formed side by side on a semiconductor substrate, at least one electrode of the semiconductor light emitting sections and a conductor layer led out electrically from each of the electrodes are formed on one main surface of the semiconductor substrate and the conductor layer is formed overriding the interlayer insulation layer on the semiconductor substrate, wherein:
- a high resistance isolation region is formed, facing the main surface of the semiconductor substrate, between the semiconductor light emitting sections arranged side by side and on each of the outsides of the light emitting sections disposed on both outsides.
Dependencies are inferred from the claim text.