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US 6,444,896 B1Granted
Quantum dot thermoelectric materials and devices
AssigneeMassachusetts Institute of Technology
InventorsTheodore C. Harman, Patrick J. Taylor, Michael P. Walsh
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Abstract
Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSexTe1−x/PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of merit (ZT) relative to bulk values.
Claims20
A quantum dot superlattice (QDSL) structure comprising:
- a first plurality of layers formed from material L DxJ1−x;
- a second plurality of layers formed from material L J;
- and
- wherein:
- D is a Group VI non-metal selected from the group consisting of Te, Se, and S;
- J is a group VI non-metal selected from the group consisting of Te, Se, and S;
- L is a group IV metal selected from the group consisting of Pb, Sn, and Ge;
- D is not the same as J,
- L is not the same as J,
- 0≦x ≦1.
7 more elements
A thermoelectric device comprising:
- (a) a substrate having a first surface and a second opposed surface;
- and
- (b) a superlattice structure having a first surface disposed adjacent to the second surface of the substrate and a second opposed surface, the superlattice structure comprising:
- (i) a first plurality of layers formed from material L DzJ1−z;
- and
- (ii) a second plurality of layers formed from material L J and wherein
- D is a Group VI non-metal selected from the group consisting of Te, Se, and S,
- J is a Group VI non-metal selected from the group consisting Te, Se, and S,
- L is a Group IV metal selected from the group consisting of Pb, Sn and Ge, and
- L is not the same as J.
7 more elements
A superlattice structure comprising:
- a first plurality of layers of PbSeTe, each of said first plurality of layers including at least one quantum dot;
- and
- a second plurality of layers of PbTe disposed in alternating relationship with the first plurality of layers of PbSeTe.
Dependencies are inferred from the claim text.