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US 6,444,585 B1Granted
Method for manufacturing semiconductor device capable of expelling argon gas
AssigneeNEC Corporation
InventorMasayuki Yoshida
Life of this patent
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Abstract
In a method for manufacturing a semiconductor device, a first conductive layer is formed on a semiconductor substrate. Then, a plasma etching process using Ar ions is performed upon the first conductive layer to remove natural oxide from the first conductive layer. Then, a heating process at a temperature higher than about 650° C. is performed upon the first conductive layer to expel Ar atoms from the first conductive layer. Finally, a second conductive layer is formed by a sputtering process on the first conductive layer.
Claims4
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first conductive layer on a semiconductor substrate;
- performing a plasma etching process using Ar ions upon said first conductive layer to remove natural oxide from said first conductive layer;
- and
- performing a heating process at a temperature higher than about 650° C. upon said first conductive layer to expel Ar atoms from said first conductive layer, after said plasma etching process is performed;
- and
- forming a second conductive layer by a sputtering process on said first conductive layer, after said heating process is performed.
3 more elements
Dependencies are inferred from the claim text.