Substrate-cleaning method and substrate-cleaning solution
AssigneeNEC Corporation
InventorHidemitsu Aoki
Life of this patent
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Abstract
In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.
Claims15
A substrate-cleaning solution used for cleaning of a substrate which has a metal material and a semiconductor material both exposed on the surface, which cleaning solution contains (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material and (b) an anionic or cationic surfactant.
A substrate-cleaning solution used for cleaning of a substrate which has a metal material and a semiconductor material exposed on the surface and which has been subjected to a chemical mechanical polishing treatment with a polishing solution, which cleaning solution contains (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, (b) an anionic or cationic surfactant, and (c) a second complexing agent capable of easily forming a complex with the metal impurities remaining on the surface of the substrate subjected to the chemical mechanical polishing treatment.
Dependencies are inferred from the claim text.