Method of forming a copper diffusion barrier
AssigneeNovellus Systems, Inc.
InventorsSrinivasan Sundararajan, Mayur Trivedi
Life of this patent
Estimating the term…
Abstract
A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal portion (such as a copper line or via) and an insulating dielectric to prevent metal atom diffusion into the dielectric. The SiCN layer can also be used as an etchstop or passivation layer. The SiCN layer can be applied in a variety ways, including PECVD (e.g., using SiH4, CH4, and NH3) and HDP CVD (e.g., using SiH4, C2H2, and N2).
Claims23
A method of forming a semiconductor device, comprising:
- forming a metal portion over underlying connections;
- depositing a silicon carbon nitride (SiCN) layer on the metal portion;
- and
- depositing a dielectric layer over the SiCN layer.
A method of cleaning processing residue, comprising:
- providing a semiconductor wafer in a PECVD chamber;
- processing the wafer;
- and
- introducing NH3 or H2 feed gas into the PECVD chamber to remove the processing residue from the wafer, wherein the flow rate of the NH3 or H2 feed gas is between approximately 50 and 8000 sccm, and the high frequency and low frequency RF power are between 50 and 4000 W.
A method of cleaning processing residue, comprising:
- providing a semiconductor wafer in an HDP chamber;
- processing the wafer;
- and
- introducing H2 feed gas into the HDP chamber to remove the processing residue from the wafer, wherein the flow rate of the H2 feed gas is between approximately 0 and 2000 sccm, and the low frequency RF power is between 500 and 4000 W.
A method of cleaning processing residue, comprising:
- introducing H2 feed gas into an HDP chamber, wherein the flow rate of the H2 feed gas is between approximately 0 and 2000 sccm, and the low frequency RF power is between 500 and 4000 W, wherein the processing residue is CMP residue, and wherein the CMP residue is copper oxide and organics from CMP and clean.
A method of cleaning processing residue, comprising:
- introducing H2 feed gas into an HDP chamber, wherein the flow rate of the H2 feed gas is between approximately 0 and 2000 sccm, and the low frequency RF power is between 500 and 4000 W, wherein the processing residue is etch residue.
Dependencies are inferred from the claim text.