Method of reducing the conductivity of a semiconductor and devices made thereby
AssigneeHRL Laboratories, LLC
InventorsDaniel P. Docter, Kursad Kiziloglu
Life of this patent
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Abstract
Disclosed is a method of reducing the conductivity/charge of a layer of group III-V semiconductor doped with Sn. The method includes the steps of: forming an region of SiO2 on the semiconductor layer; annealing at least the semiconductor layer and the region of SiO2 at a temperature sufficiently high to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO2; and removing the region of SiO2 after the annealing step is performed. The method can be used, for example, during the manufacture of HEMT, PHEMT, MESFET and HBT devices.
Claims21
A method of reducing the conductivity of a layer of semiconductor doped with Tin (Sn) comprising the steps of:
- (a) forming a region of SiO2 on said semiconductor layer;
- and
- (b) annealing at least the semiconductor layer and the region of SiO2 at a temperature to cause atoms of the Sn dopant to leach from the semiconductor layer into the region of SiO2.
A method of reducing the conductivity of a layer of a group Ill-V semiconductor doped with a group IV semiconductor, the group III, IV, and V semiconductors each having an atomic number with the atomic number of the group IV semiconductor being larger than the atomic numbers of each of the group III and group V semiconductors, said method comprising the steps of:
- (a) forming a region of SiO2 on said group Ill-V semiconductor layer;
- and
- (b) annealing at least the semiconductor layer and the region of SiO2 at a temperature to cause atoms of the group IV semiconductor to leach from the semiconductor layer into the region of SiO2.
Dependencies are inferred from the claim text.