US 6,444,549 B2 · Thermal processing of semiconductor devices

Abstract

Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate of at least 200° C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (σ/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.

Claims5

Dependent claims

A fabrication process of semiconductor devices featuring both reduced leakage currents and reduced variations of leakage currents, which comprises the steps in sequence of:

(A) subjecting a semiconductor substrate to ion implantation with high energy;
(B) introducing the resulting ion-implanted semiconductor substrate into a first furnace preheated to a temperature of 500° C. and subjecting the substrate to annealing at a temperature selected from the group of temperatures consisting of 1015° C., 1100° C., and 1150° C.;
and
(C) introducing the resulting semiconductor substrate from step (B) into a second furnace, and heating the substrate in said second furnace to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate equal to or higher than 300° C./sec.

1 more element

Dependencies are inferred from the claim text.

Thermal processing of semiconductor devices

Life of this patent

Thermal processing of semiconductor devices

Life of this patent

Abstract

Claims5