Method for manufacturing semiconductor device
AssigneeRohm Co., Ltd.
InventorsKazuhisa Sakamoto, Koichi Kitaguro
Life of this patent
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Abstract
The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type in the epitaxially grown semiconductor layer to form at least a pn junction, and further providing rapid thermal anneal by rapid heating-up and rapid cooling-down in any step in the manufacturing process. By so processing, there can be obtained a semiconductor device having high speed switching characteristics in stable manner without causing problems in manufacturing process such as diffusion of heavy metal or irradiation of corpuscular ray.
Claims8
A method for manufacturing a semiconductor device comprising:
- (a) growing a semiconductor layer having moderate crystal defects by providing epitaxial growth on a surface of a sub-wafer made of a semiconductor material not provided with mirror finishing without having any other intervening material positioned between the semiconductor layer and the surface of the sub-wafer,
- (b) introducing impurities having different conductivity types in said epitaxially grown semiconductor layer to form at least a pn junction, and
- (c) further providing rapid thermal annealing by rapidly heating-up and rapidly cooling-down in any step in manufacturing said semiconductor device, wherein said surface of said sub-wafer is formed to a roughness of 0.01-0.5 μm in microroughness, and said rapid thermal anneal is carried out at 700-900° C.
A method for manufacturing a semiconductor device comprising:
- (a) providing epitaxial growth of a semiconductor layer on a surface of a sub-wafer not provided with mirror finishing,
- (b) introducing impurities having different conductivity type in said epitaxially grown semiconductor layer to form at least a pn junction, and
- (c) further providing rapid thermal anneal by rapid heating-up and rapid cooling-down in any step in a manufacturing process, wherein a surface of said sub-wafer surface is polished with a polishing material of more than 2 μm to form said surface, and said semiconductor layer is epitaxially grown on said surface.
Dependencies are inferred from the claim text.