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US 6,444,546 B1Granted
Single electron device using ultra-thin metal film and method for fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsSeongjae Lee, Kyoungwan Park, Mincheol Shin
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Abstract
There is provided a single electron device. The device has weak links with bottle-neck figure in place of the tunnel junction of the prior device. The weak links are easily formed on the same substrate by simple processes and thus the integration of the single electron device can be easily achieved.
Claims12
A method for fabricating a single electron device, comprising the steps of:
- providing an insulating substrate;
- forming an ultra-thin metal film on the substrate;
- forming a protecting insulating film on the metal film to protect the metal film;
- and
- selectively etching the protecting insulating film and the metal film, in turn, to form a pattern of the metal film, wherein the pattern of the metal film includes a source region, an electron island, a drain region, two weak regions with bottleneck figure and a gate electrode, wherein the source and drain regions are coupled with the electron island through the two weak links, respectively, each of the weak links is inducible of the Coulomb blockade effect, and the gate electrode is for providing a control voltage to control electric characteristics of the electron island.
2 more elements
Dependencies are inferred from the claim text.