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US 6,444,542 B2Granted
Integrated circuit and method
AssigneeTexas Instruments Incorporated
InventorsTheodore S. Moise, Guoqiang Xing, Mark Visokay, Justin F. Gaynor, Stephen R. Gilbert, Francis Celii, Scott R. Summerfelt, Luigi Colombo
Life of this patent
Estimating the term…
Abstract
A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
Claims2
A method of etching a material with the use of a hardmask and a plasma-activated etchant, the improvement consisting of
- the hardmask is made of nitrides of titanium and/or aluminum, the etchant includes chlorine, oxygen, and nitrogen, and the etching is at a temperature on the order of 250-400C.
Dependencies are inferred from the claim text.