Method for manufacturing a semiconductor memory device using hemispherical grain silicon

A method for manufacturing a semiconductor device for use in a memory cell, the method comprising the steps of:

• a) preparing an active matrix provided with at lest one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs;
• b) forming a supporting layer, made of carbon, on top of the active matrix and patterned into a predetermined configuration, thereby obtaining a patterned supporting layer;
• c) forming a conductive layer for bottom electrodes on the patterned supporting layer and the active matrix;
• d) forming a photoresist layer on the conductive layer;
• e) planarizing the photoresist layer and the conductive layer until the patterned supporting layer is exposed;
• and
• f) removing the patterned supporting layer.