High Q inductor with Cu damascene via/trench etching simultaneous module

A method of forming a high-Q inductor over the surface of a semiconductor substrate by extending the thickness df the dielectric layer in which the inductor is created, comprising:

• providing a semiconductor substrate, points of electrical contact having been provided in or on the surface of said substrate, said points of electrical contact to be first points of electrical contact in an active surface regions of the surface of said substrate overlying and being in electrical contact with semiconductor devices formed in or on the surface of said substrate, said points of electrical contact further to be second points of electrical contact to which an overlying inductor is to be connected;
• creating a first layer of first and second conductive plugs in a first layer of etch stop and a thereover deposited first layer of dielectric, whereby first layer of said first conductive plugs align with said first points of electrical contact in an active surface regions of the surface of said substrate, whereby further said first layer of second conductive plugs align with said second points of electrical contact in an active surface regions of the surface of said substrate;
• and
• creating a second layer of first and second conductive plugs in a second layer of etch stop and a thereover deposited second layer of dielectric, whereby said second etch stop layer is deposited over said first layer of dielectric, whereby said second layer of first conductive plugs align with said first points of electrical contact in an active surface regions of the surface of said substrate, whereby further said second layer of second conductive plugs align with said second points of electrical contact in an active surface regions of the surface of said substrate.

A method of forming a high-Q inductor over the surface of a semiconductor substrate, comprising:

• providing a semiconductor substrate, points of electrical contact having been provided in or on the surface of said substrate, said points of electrical contact to be points of electrical contact to which an overlying inductor is to be connected;
• depositing a first etch stop layer of the surface of said substrate;
• depositing a first layer of dielectric over the first etch stop layer;
• patterning and etching said first layer of dielectric and said first etch stop creating first openings in said first layer of dielectric and said first etch stop layer that align with and expose said points of electrical contact provided in or on the surface of said substrate;
• depositing a first layer of conductive material over the surface of said first layer of dielectric, filling said openings creating first conductive plugs;
• depositing a second etch stop layer over the surface of said first layer of dielectric, thereby including the surface of said conductive plugs;
• patterning and etching said second etch stop layer, creating openings in said second etch stop layer that align with said first conductive plugs;
• depositing a second layer of conductive material over the surface of said second etch stop layer, filling said openings created in said second etch stop layer;
• planarizing the surface of said second layer of conductive material down to at least the surface of said second etch stop layer using methods of Chemical Mechanical Polishing, creating second conductive plugs that penetrate said first etch stop layer in addition to said first layer of dielectric in addition to penetrating said second etch step layer and that align with said points of electrical contact provided in or on the surface of said substrate;
• depositing a second layer of dielectric over the surface of said second etch stop layer, including the surface of said second conductive plugs;
• patterning and etching said second layer of dielectric, creating openings in said second layer of dielectric that align with said second conductive plugs;
• depositing a third conductive layer over the surface of said second layer of dielectric, including said openings created in said second layer of dielectric;
• and
• planarizing the surface of said second layer of dielectric, creating extended conductive plugs penetrating said first etch stop layer, said first layer of dielectric, said second etch stop layer and said second layer of dielectric, whereby said extended conductive plugs align with said points of contact provided in or on the surface of said substrate.

A method of forming a high-Q inductor over the surface of a semiconductor substrate by extending the thickness of the dielectric layer in which the inductor is created, comprising;

• providing a semiconductor substrate, points of electrical contact having been provided in or on the surface of said substrate, said points of electrical contact to be points of electrical contact to which an overlying inductor is to be connected;
• creating a first layer of conductive plugs in a first layer of etch stop and a thereover deposited first layer of dielectric, whereby first layer of conductive plugs align with said points of electrical contact in surface regions of the surface of said substrate to which inductors are to be connected;
• and
• creating a second layer of conductive plugs in a second layer of etch stop and a thereover deposited second layer of dielectric, said second layer of etch stop to be deposited over the surface of said first layer of dielectric, whereby said second layer of second conductive plugs aligns with said points of electrical contact to which an overlying inductor is to be connected.