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US 6,444,514 B1Granted
Semiconductor integrated circuit device and manufacturing method thereof
AssigneeHitachi, Ltd.
InventorsToshiaki Nishimoto, Takashi Aoyagi, Shogo Kiyota
Life of this patent
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Abstract
In the semiconductor integrated circuit device, an AND-type flash memory is formed on a substrate in which stripe-like element separation regions 5 are formed and active regions L sandwiched between the element separation regions 5 are formed like stripes. A silicon monocrystal substrate containing nitrogen or carbon is used as the semiconductor substrate, to reduce dislocation defects and junction leakages so that the reliability and yield are improved.
Claims18
A method of manufacturing a semiconductor integrated circuit device comprising:
- a step (a) of forming a pattern having a stripe-like opening on a main surface of a semiconductor substrate and of etching the semiconductor substrate with the pattern used as a mask, thereby to form a stripe-like groove on the main surface of the semiconductor substrate;
- a step (b) of depositing an insulating film for filling internally the groove;
- a step (c) of etching or polishing the insulating film such that the insulating film remains in the groove, thereby to form an element separation region;
- a step (d) of depositing a polycrystal silicon film on the main surface of the semiconductor substrate, and of patterning the polycrystal silicon film into a stripe-like shape in a direction parallel to the element separation region formed like a stripe;
- and
- a step (e) of ion-implanting impurities into an active region surrounded by the element separation region, using the polycrystal silicon film formed in the stripe-like shape as a mask, thereby to form a semiconductor region which functions as a source/drain region and a wire of a MIS-type element, wherein
- a monocrystal silicon substrate into which a light element having a smaller mass number than silicon is introduced is used as the semiconductor substrate;
- and
- wherein the light element is nitrogen or carbon.
6 more elements
The method of manufacturing a semiconductor integrated circuit device according to claim 15 wherein a substrate in which a silicon layer is grown within a range of 1 to 5 μm by epitaxial growth on a silicon monocrystal substrate to which a light emitting having a smaller mass number than silicon is introduced is used as the semiconductor substrate.
A method of manufacturing a semiconductor integrated circuit device comprising:
- a step (a) of forming a pattern having a stripe like opening on a main surface of a semiconductor substrate and of etching the semiconductor substrate with the pattern used as a mask, thereby to form a stripe-like groove on the main surface of the semiconductor substrate;
- a step (b) of depositing an insulating film for filling internally the groove;
- a step (c) of etching or polishing the insulating film such that the insulating film remains in the groove, thereby to form an element separation region;
- a step (d) of depositing a polycrystal silicon film on the main surface of the semiconductor substrate, and of patterning the polycrystal silicon film into a stripe-like shape in a direction vertical to the element separation region formed like a stripe;
- and
- a step (e) of ion-implanting impurities into an active region surrounded by the element separation region, using the polycrystal silicon film formed in the stripe-like shape as a mask, thereby to form a semiconductor region which functions as a source/drain region which is shared in common between adjacent MIS-type elements, wherein
- a monocrystal silicon substrate into which a light element having a smaller mass number than silicon is introduced is used as the semiconductor substrate;
- and
- wherein the light element is nitrogen or carbon.
6 more elements
A method of manufacturing a semiconductor integrated circuit device according to claim, wherein the active region formed like a stripe has a longer edge which is 100 or more times longer than a shorter edge.
A method of manufacturing a semiconductor integrated circuit device further comprising:
- a step (a) of forming a pattern having a stripe like opening on a main surface of a semiconductor substrate and of etching the semiconductor substrate with the pattern used as a mask, thereby to form a stripe-like groove on the main surface of the semiconductor substrate;
- a step (b) of depositing an insulating film for filling internally the groove;
- a step (c) of etching or polishing the insulating film such that the insulating film remains in the groove, thereby to form an element separation region;
- a step (d) of depositing a polycrystal silicon film on the main surface of the semiconductor substrate, and of patterning the polycrystal silicon film into a stripe-like shape in a direction vertical to the element separation region formed like a stripe;
- and
- a step (e) of ion-implanting impurities into an active region surrounded by the element separation region, using the polycrystal silicon film formed in the stripe-like shape as a mask, thereby to form a semiconductor region which functions as a source/drain region which is shared in the common between adjacent MIS-type elements;
- wherein a monocrystal silicon substrate into which a light element having a smaller mass number than silicon is introduced is used as the semiconductor substrate;
- wherein a substrate in which a silicon layer is grown within a range of 1 to μm by epitaxial growth on a silicon monocrystal substrate to which a light emitting having a smaller mass number than silicon is introduced is used as the semiconductor substrate;
- wherein the light element is nitrogen or carbon;
- wherein the active region formed like a stripe has a longer edge which is 100 or more times longer than a shorter edge.
7 more elements
A method of manufacturing a semiconductor integrated circuit device further comprising the steps of:
- a step (a) of forming a pattern having a stripe-like opening on a main surface of a semiconductor substrate and of etching the semiconductor substrate with the pattern used as a mask, thereby to form a stripe-like groove on the main surface of the semiconductor substrate;
- a step (b) of depositing an insulating film for filling internally the groove;
- a step (c) of etching or polishing the insulating film such that the insulating film remains in the groove, thereby to form an element separation region;
- a step (d) of depositing a polycrystal silicon film on the main surface of the semiconductor substrate, and of patterning the polycrystal silicon film into a stripe-like shape in a direction parallel to the element separation region formed like a stripe;
- and
- a step (e) of ion-implanting impurities into an active region surrounded by the element separation region, using the polycrystal silicon film formed in the stripe-like shape as a mask, thereby to form a semiconductor region which functions as a source/drain region and a wire of a MIS-type element;
- wherein a monocrystal silicon substrate into which a light element having a smaller mass number than silicon is introduced is used as the semiconductor substrate;
- wherein a substrate in which a silicon layer is grown within a range of 1 to 5 μm by epitaxial growth on a silicon monocrystal substrate to which a light emitting having a smaller mass number than silicon is introduced is used as the semiconductor substrate;
- wherein the light element is nitrogen or carbon;
- and
- wherein the active region formed like a stripe has a longer edge which is 100 or more times longer than a shorter edge.
8 more elements
Dependencies are inferred from the claim text.